Plenary Speakers

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Hiroshi Amano (Nagoya Univ., Japan)
"Growth and Characterization of III-N Ultraviolet Vertical-Cavity Surface Emitting Lasers and Avalanche Photodiodes by MOCVD"
Russell Dupuis (Georgia Tech., USA)
"Selective Area Growth of III-V on (001) Si: Challenges and Opportunities for Device Integration"
Bernardette Kunert (IMEC, Belgium)
"Growth of Indium-Including Nitride Semiconductors"
Takashi Matsuoka (Tohoku Univ., Japan)
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Umesh Mishra (UCSB, USA)
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Lars Samuelson (Lund Univ., Sweden)
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Thomas Zettler (LayTec, Germany)

Invited Speakers

2D Materials Special Session

"MOCVD Growth and Properties of Hexagonal Boron Nitride Epilayers"
Hongxing Jiang (Texas Tech Univ., USA)
"Epitaxial Growth of 2D Layered Chalcogenide Monolayers and Heterostructures"
Joan Redwing (Penn State Univ., USA)

As/P Equipment Special Session

"Advances in Production MOCVD Technology for Compound Semiconductor Thin Film Structures"
Martin Dauelsberg (AIXTRON, Germany)
"Recent Progress in MOCVD Technology for Compound Semiconductor Materials"
Soo Min Lee (Veeco, USA)
"Design Evolution of MOVPE Reactors for Improved Productivity: Adaptation to Nitrides and Feedback to Classical III-V"
Koh Matsumoto (Taiyo Nippon Sanso, Japan)
"Early Development of MOVPE Reactors"
Christine Wang (MIT Lincoln Lab., USA)


"Single Photon Sources Based on Non-Polar InGaN Quantum Dots"
Rachel Oliver (Univ. of Cambridge, UK)

Mismatched epitaxy / III-V on Si

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David Lackner (Fraunhofer ISE, Germany)
"III-V Photonic and Electronic Devices Grown on Silicon by MOCVD"
Kei May Lau (Hong Kong Univ. of Sci. & Tech., Hong Kong)
"Overcoming Lattice and Polarity Mismatches in MOVPE Growth of (In)GaAs on Si(100) Substrate"
Ryo Nakao (NTT, Japan)
"Heteroepitaxy of GaN-based Light Emitting Devices on Si"
Qian Sun (Suzhou Institute of Nano-Tech & Nano-Bionics, China)
"III/V's on Silicon: Atomic Structure, Local Electric Fields and Charge Densities"
Kerstin Volz (Univ. of Marburg, Germany)


"Evolution of Growth Technologies for Gallium Oxide Power Devices"
Shizuo Fujita (Kyoto Univ., Japan)
"MOCVD Growth and LED Applications of GaN-Based Materials on Ga2O3 Single Crystal Substrates"
Akito Kuramata (Tamura Corp., Japan)

Growth Fundamental

"Observation of Crystal Growth of Group III Nitride Semiconductors by Using In Situ X-ray Diffraction Attached Metalorganic Vapor Phase Epitaxial Equipment"
Motoaki Iwaya (Meijo Univ., Japan)
"Multi-Physics Simulations of GaN MOVPE Growth"
Kenji Shiraishi (Nagoya Univ., Japan)
"MOVPE Process Modeling for Improvement of Production Yield and Device Performance"
Roman Talalaev (STR, Russia)
"Surface Reconstruction and Impurity Incorporation in GaN MOVPE: Ab Initio-Based Modeling"
Yoshihiro Kangawa (Kyushu Univ., Japan)

Nitride Emitter (incl. Laser)

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Hideki Hirayama (RIKEN, Japan)
"265 nm Deep Ultraviolet Light-Emitting Diodes Grown on AlN Substrates for Disinfection Applications"
Naohiro Kuze (Asahi Kasei, Japan)
"MOVPE Growth of AlGaInN Structures in Violet/Blue/Green Laser Diode Technology"
Mike Leszczynski (Unipress, Poland)
"GaN-based Visible Laser Diodes"
Shinichi Nagahama (Nichia, Japan)
"Investigation of Epitaxially Grown AlB(Ga)N Layers on AlN Templates"
Ferdinand Scholz (Univ. of Ulm, Germany)
"GaN-Based Vertical-Cavity Surface-Emitting Lasers with MOVPE-Grown AlInN/GaN DBRs"
Tetsuya Takeuchi (Meijo Univ., Japan)

Nitride Power

"Material Challenges of Al-rich AlGaN Alloys for Next Generation Power Electronics"
Andrew Allerman (Sandia National Labs, USA)
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Subramaniam Arulkumaran (Nanyang Tech. Univ., Singapore)
"Point Defect Control During AlGaN Growth by MOVPE"
Ramon Collazo (NCSU, USA)
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Satoshi Nakazawa (Panasonic, Japan)

Laser & Optical Integration

"InP-Based Monolithic Integration Technologies for Photonic Devices in Digital Coherent Transmission"
Mitsuru Ekawa (Sumitomo Electric, Japan)
"Improvement of Dynamic Characteristics of 850 nm VCSELs for Use in Optical Communications"
Takashi Kondo (Fuji Xerox, Japan)
Sponsoring Companies
Nichia Corporation

Exhibition & Advertisement
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